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SiJ800DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
V GS = 10 V thr u 5 V
V GS = 4 V
20
8 0
15
60
10
40
T C = 25 °C
5
20
V GS = 3 V
T C = 125 °C
0
0
T C = - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
0.012
0.010
0.00 8
0.006
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
V GS = 4.5 V
V GS = 10 V
3200
2400
1600
8 00
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
C iss
C oss
0.004
0
C rss
0
15
30
45
60
0
5
10
15
20
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current and Gate Voltage
10
2.0
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
8
I D = 20 A
V DS = 10 V
1.7
I D = 20 A
V GS = 10 V
V DS = 20 V
6
4
2
0
V DS = 30 V
1.4
1.1
0. 8
0.5
V GS = 4.5 V
0
10
20
30
40
- 50
- 25
0
25
50
75
100
125
150
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 64803
S09-0668-Rev. A, 20-Apr-09
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
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